Thursday, June 19, 2014

A new Carbon Nanotube-Indium-Gallium-Zinc-oxide Circuit Discovered


When it comes to electronics, silicon will now have to share the spotlight. In a paper recently published in Nature Communications, researchers from the USC Viterbi School of Engineering describe how they have overcome a major issue in carbon nanotube technology by developing a flexible, energy-efficient hybrid circuit combining carbon nanotube thin film transistors with other thin film transistors. This hybrid could take the place of silicon as the traditional transistor material used in electronic chips, since carbon nanotubes are more transparent, flexible, and can be processed at a lower cost.

Electrical engineering professor Dr. Chongwu Zhou and USC Viterbi graduate students Haitian Chen, Yu Cao, and Jialu Zhang developed this energy-efficient circuit by integrating carbon nanotube (CNT) thin film transistors (TFT) with thin film transistors comprised of indium, gallium and zinc oxide (IGZO).

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